Universal germanium p-n-p transistor for use in low-frequency and high-frequency (up to 30 MHz) amplifying, generator and impulse stages.
Case type: metal-glass with flexible or hard terminals. Transistor type is indicated on the case.
Mass: not more than 11 g (with hard terminals), not more than 12 g (with flexible terminals)
Technical requirement version ShT3.365.014TU
Main parameters
| Collector power dissipation, W | 3 |
| Collector-to-base breakdown voltage (at given collector reverse current and open emitter circuit), V | 45 |
| Emitter-to-base breakdown voltage (at given emitter reverse current and open collector circuit), V | 1 |
| Collector-to-emitter saturation resistance, not more than, ? | 40 |
| Maximum allowed constant collector current, mA | 1500 |
| Maximum allowed impulse collector current, A | 1.5 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 40 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 45 |
| Maximum emitter-to base voltage at zero collector current, V | 1 |
| Collector power dissipation (with a heatsink), W | 0.5 (3) |
| Static current transfer coefficient | 25..60 |
| Collector-to-emitter saturation voltage, V | <2 |
| Collector reverse current, mA | <2 |
| Emitter reverse current, mA | <1 |
| Collector-to-emitter reverse current, mA | <3 |
| Beta cutoff, MHz | 30 |
| Collector capacitance, pF | <130 |
| Emitter capacitance, pF | <2000 |
| Maximum junction temperature, oC | 85 |
| Ambient air temperature, oC | -60..+70 |
