1T308V
Universal germanium diffusion-alloy p-n-p transistor, designed for use in auto-generators, amplifiers, impulse devices.
Case type: metal-glass with flexible terminals.
Mass not more than 2.2 g.
Technical requirement version ZhK.365.120 TU
Technical parameters
| Maximum allowed collector constant current, mA | 50 |
| Maximum allowed collector impulse current, mA | 120 |
| Maximum collector-to-emitter voltage at given collector current and zero base current, V | 15 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 20 |
| Maximum emitter-to-base voltage at zero collector current, V | 3 |
| Maximum allowed collector power dissipation, W | 150 |
| Static current transfer coefficient | 80..150 |
| Collector-to-base constant voltage, V | 1 |
| Emitter constant current, mA | 10 |
| Collector-to-emitter saturation voltage, V | 1.2 |
| Collector reverse current, mkA | 5 |
| Beta cutoff, MHz | 150 |
| Noise ratio, dB | 8 |
| Collector junction capacitance, pF | 8 |
| Ambient air temperature, oC | -60..+70 |
