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2P307A

Transistors 2P307A

Siliconepitaxial-planar field-effect transistor with N-channel and P-N gate. Designed for use in input and output stages of high- and low-frequency amplifiers with high input impedance.

Case type: glass-metal with flexible terminals

Device type is indicated on its case

Mass not more than 0.5 g

Electrical parameters

Noise ratio (at f=400 MHz, UDS=10 V, ID=5 mA), not more than, dB

6

Noise electromotive force (at f=1 kHz, UDS=10 V, UGs=0), not more than,

nV/√Hz

20

Mutual transconductance (UDS=10 V, UGS=0, f=50..1500 Hz), mA/V

at +25 oC

at -60 oC

at +125 oC

4..9

4

2

Drain residual current (at UDS=10 V, UGS=0), mA

3..9

Cut-off voltage (at UDS=10 V, ID=10 mkA), V

0.5..3

Gate leakage current, not more than

at UGS=-10 V and +25 oC

at UGS=-10 V and +125 oC

at UGS=-30 V

1 nA

1 mkA

10 mkA

Input capacitance (at UDS=10 V, UGS=0, f=10 MHz), not more than, pF

5

Input-to-output capacitance (at UDS=10 V, UGS=0, f=10 MHz), not more than, pF

1.5

Operational limits

Drain-to-source voltage, V

25

Gate-to-drain, gain-to-source voltage, V

30

Drain constant current, mA

30

Gate forward current, mA

5

Constant power dissipation1, mW

at +60..+25 oC

at +125 oC

250

50

Transistor structure temperature, oC

+140

Ambient air temperature, oC

-60..+125

1At T>+25 oC maximum power dissipation can be calculated in accordance with the following formula:

PMAX=250-2(T-25) mW

You can order 2P307A from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com