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2T117B

2T117B

Epitaxial-planarunijunction silicon transistor with n-type base, designed for use in low-power generators.

Case type: metal with flexible terminals, type KT1-7

Device type is indicated on its case and label

Mass not more than 0.45g.

Technical requirement version TT3.365.000 TU

Technical parameters

2T117A

2T117B

Maximum allowed constant collector current, mA

50

50

Maximum allowed impulse collector current, A

1

1

Maximum collector-to-base voltage at given collector current and zero emitter current, V

30

30

Maximum emitter-to-base voltage at zero collector current, V

30

30

Maximum collector power dissipation, mW

300

300

Static current transfer coefficient

0.5..0.7

0.65..0.8

Emitter reverse current, mkA

1

1

Beta cutoff, MHz

>0.2

>0.2

Maximum junction temperature, oC

+130

+130

Ambient air temperature, oC

-60..+125

-60..+125


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