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2T3108B

Amplifying silicon mesa-epitaxial planar p-n-p transistor with rated noise factor at 100 MHz. Can be used in video logarithmic amplifiers and high-frequency linear amplifiers.

Transistors are produced in metal-glass case with flexible terminals.

Transistor type is marked on its case.

Mass not more than 0.5 g

Case type KT-1-7

Main parameters

Maximum allowed collector constant current, mA

200

Maximum emitter-to collector voltage at given collector current and base-to-emitter circuit resistance, V

45

Maximum collector-to-base current at given collector current and zero emitter current, V

45

Maximum emitter-to-base constant voltage at zero collector current, V

5

Maximum allowed collector power dissipation, mW

300

Static current transfer coefficient

50..150

Collector-to-emitter saturation voltage, V

0.2

Collector reverse current, µA

0.1

Beta cutoff, MHz

250

Noise factor, dB

6

Collector junction capacitance, pF

5

Emitter junction capacitance, pF

6

Junction temperature, oC

-60..+125

Ambient air temperature, oC

-60..+125

You can order 2T3108B from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com