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2T312B

Universal epitaxial-planar silicon n-p-n transistor for switching devices, amplifiers and generators.

Case type: KTYu-3-1, metal-glass with flexible terminals.

Device type is indicated on its case.

Mass not more than 1 g.

Technical requirement version ZhK3.365.143 TU

Technical parameters (at junction temperature +25 oC)

2T312A

2T312B

2T312V

Maximum allowed collector constant current, mA

30

30

30

Maximum allowed collector impulse current, mA

60

60

60

Maximum collector-to-emitter voltage at given collector current and base-to-emitter circuit resistance, V

30

30

30

Maximum collector-to-base voltage at given collector current and zero base current, V

30

30

30

Maximum allowed emitter-to-base constant voltage at zero collector current

4

4

4

Maximum allowed collector power dissipation, W

225

225

225

Static current transfer coefficient

12..100

25..100

50..250

Collector-to-emitter saturation voltage, V

0.5

0.5

0.35

Collector reverse current, mkA

1

1

1

Beta cutoff, MHz

80

120

120

Collector junction capacitance, pF

5

5

5

Emitter junction capacitance, pF

20

20

20

Maximum junction temperature, oC

+150

+150

+150

Ambient air temperature, oC

-60..+125

-60..+125

-60..+125

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