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2T3117A

Transistors 2Т3117Аare silicon epitaxial-planar of n-p-n structure, pulse.

Transistors are designed for application in pulse and switching devices.
Transistors are produced in metal-glass casing with flexible lead-outs.
Device type – marked on casing.
Transistor weight, maximum 0,4 g.
Casing type: KТ-1-7.
Technical conditions: аА0.339.256 ТU.

Basic technical characteristics of transistors 2Т3117А:
• transistor structure: p-n-p;
• Рk t max – constant dissipated wattage of collector with heatsink: 300 mW;
• fgr - limit frequency of coefficient of current transmitting of transistor for scheme with common emitter: minimum 200 МHz;
• Ukbоmax – maximum voltage collector – base at given reverse current of collector and open circuit of emitter: 60 V;
• Uebоmax – maximum voltage emitter – base at given reverse current of emitter and open circuit of collector: 4 V;
• Ik max – maximum direct current of collector: 400 mА;
• Ikbо– reverse current of collector: maximum 5 mcА(60V);
• h21e – static coefficient of current transmitting of transistor for schemes with common emitter: in high signal mode: 40 … 200;
• Rke sat – saturation resistance between collector and emitter: maximum 1,2 Оm

Technical characteristics of transistors 2Т3117А:

Transistor type

Structure

Maximum values of parameters at Тp=25°С

Parameters values at Тp=25°С

Tp
max

Т
max

Ik
max

Ik. I.
max

UkeR max
(Uke0 max)

Ukb0 max

Ueb0 max

Рkmax
(Рk. I.max)

h21E,
(h21e)

Uke
sat.

IkbО

f gr.
(f h21)

KSH

Сk

Сe

V

V

V

mW

V

mcА

МHz

dB

pF

pF

°С

°С

2Т3117А

n-p-n

400

800

60

60

4

300

40...200

0,5

5

200

-

10

80

150

-60…+125

You can order 2T3117A from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com