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2T313B

2T313B

Epitaxial-passivated silicon transistor.

Case type: metal-glass

Mass not more than 0.5 g

Main parameters (at ambient temperature +23±10 oC)

Collector-to-emitter saturation voltage (at IC=150 mA, IB=15 mA), not more than, V

0.5

Base-to-emitter saturation voltage (at IC=150 mA, IB=15 mA), not more than, V

1.3

Collector reverse current (at UCB=50 V), not more than, µA

0.5

Emitter reverse current (at UEB=5 V), not more than, µA

0.5

Static current transfer coefficient (at UCB=10 V, IE=1 mA)

80..300

Absolute high frequency current transfer coefficient (at UCB=10 V, IE=1 mA), not less than

2

Feedback circuit high frequency response time (at UCE=20 V, IC=50 mA, f=100 MHz), not more than, ns

120

Collector junction capacitance (at UCB=10 V, f=10 MHz), not more than, pF

12

You can order 2T313B from us

Russian Electronics company Russia, Moscow region, Ryazan,Sobornay square 2.

Tel: +7 (491) 227-61-51, Fax: +7 (491) 227-18-88

russian-electronics.com