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2T316B

2T316B

Universal silicon epitaxial-planar n-p-n transistor for switching devices.

Case type: metal-glass with flexible terminals, type KT-1-7

Device type is indicated on its case

Mass not more than 0.5 g

Technical requirement version SB0.336.019 TU

Technical parameters

Maximum allowed collector constant current, mA

50

Maximum allowed collector impulse current, mA

50

Maximum collector-to-emitter voltage at given collector current and emitter-to-base circuit resistance, V

10

Maximum allowed collector-to-base current at given collector current and zero base current, V

10

Maximum allowed emitter-to-base constant voltage at zero collector current, V

4

Maximum allowed collector power dissipation, mW

150

Static current transfer coefficient

40..120

Collector-to-emitter saturation voltage, V

0.4

Collector reverse current, mkA

0.5

Beta cutoff, MHz

800

Collector junction capacitance, pF

3

Emitter junction capacitance, pF

2.5

Maximum allowed junction temperature, oC

+150

Ambient air temperature, oC

-60..+125


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