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2T325B

2T325B

Silicon epitaxial-planar n-p-n amplifying transistors with non-standardized noise ratio, designed for use in high-frequency amplifiers

Case type: metal-glass with flexible terminals, type KT-2-3

Device type is indicated on its case

Mass not more than 1.2 g

Technical requirement version SB0.336.023 TU

Technical parameters

Maximum allowed constant collector current, mA

60

Maximum allowed impulse collector current, mA

60

Maximum collector-to-emitter voltage at given collector current and base-to-emitter circuit resistance, V

15

Maximum collector-to-base current at given collector current and zero emitter current, V

15

Maximum emitter-to-base voltage at zero collector current, V

4

Maximum collector power dissipation, mW

225

Static current transfer coefficient

70..210

Collector reverse current, mkA

0.5

Beta cutoff, MHz

800

Collector junction capacitance, pF

2.5

Emitter junction capacitance, pF

2.5

Maximum allowed junction temperature, oC

+150

Ambient air temperature, oC

-60..+125

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