Silicon p-i-n structure switching diode for switching of signals with frequencies 30..300 MHz.
Case type: glass with flexible terminals, type KD-1-4
Mass not more than 0.25 g.
Technical parameters
| Maximum constant reverse voltage, V | 24 |
| Maximum impulse reverse voltage, V | 35 |
| Maximum forward current, mA | 50 |
| Maximum impulse forward current, mA | 500 |
| Forward voltage, V (at given forward current, mA) | 1 (5) |
| Maximum operational frequency, MHz | 300 |
| Total capacitance, pF | 1 |
| Ambient air temperature, oC | -60..+125 |
