2D906
Diode matrix of silicon epitaxial passivated diodes for use as a diode bridge with following terminal assignment:
2D906(A-V), KD906(A-V): 3,4 – input, 1,2 – output
Also can be used as astand-by diode element with a following terminal assignment:
2D906(A-V), KD906(A-V): any of the following pairs in use - 1,2; 1,3; 1, 4; 3,2; 4,2
KD906(G-E): 1,2; 3,4
Matrix types indication on case:
2D906A – 2D906
2D906B – 2D906 and single red dot
2D906V – 2D906 and two red dots
KD906(A-E) – same as matrix type
2D906(L-V) – white ribbon and embossing near terminal 4
KD906(A-E) – white ribbon
Main parameters
| Parameter | Matrix version | Value |
| Maximum constant reverse voltage, V | A | 75 |
| B | 50 | |
| V | 30 | |
| G | 75 | |
| D | 50 | |
| E | 30 | |
| Maximum constant forward current, mA | A | 100 |
| B | 100 | |
| V | 100 | |
| G | 100 | |
| D | 100 | |
| E | 100 | |
| Maximum frequency, kHz | A | 100 |
| B | 100 | |
| V | 100 | |
| G | 100 | |
| D | 100 | |
| E | 100 | |
| Constant forward voltage (at given forward current, mA), not more than, V | A | 1(50) |
| B | 1(50) | |
| V | 1(50) | |
| G | 1(50) | |
| D | 1(50) | |
| E | 1(50) | |
| Constant reverse current (at given reverse voltage, V), not more than, mkA | A | 2 (75) |
| B | 2 (50) | |
| V | 2 (30) | |
| G | 2 (75) | |
| D | 2 (50) | |
| E | 2 (30) | |
| Reverse-recovery time, mks | A | 1 |
| B | 1 | |
| V | 1 | |
| G | 1 | |
| D | 1 | |
| E | 1 | |
| Total capacitance (at given reverse voltage, V), pF | A | 20 (5) |
| B | 20 (5) | |
| V | 20 (5) | |
| G | 40 (5) | |
| D | 40 (5) | |
| E | 40 (5) |
