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2D522B

Diodes

Silicon, pulse, epitaxial passivated diodes.
Diodes are designed for work in pulsing devices.
Diodes are produced in glass package with flexible leads.
Diodes type and polarity are marked with code color black annular bands on positive leading (anode) side of the casing:
- KD522А– with one wide and one narrow band;
- KD522А– with one wide and two narrow bands;
- KD522V – with one wide and three narrow bands.
Maximum diode weight 0,15 g.
Package type: KD-2.

Basic technical characteristics of diode 2D522B:
• Urev max – Maximum direct reverse voltage: 50 V;
• Id max – Maximum direct current: 100 mА;
• Ud – Direct forward voltage: maximum 1,1 V at Id 100 mА;
• Irev – Direct reverse current: maximum 5 mcАat Urev 50 V;
• tвoc обр– Reverse recovery time: 0,004 mcs;
• Сt – Total capacity: 4 pF

Basic technical characteristics of diodes 2D522B, KD522А, KD522B, KD522V:

Diode type

Urevmax

Urev pulmax

Idmax

Idpulmax

Ud/Id

Irev

fdmax

t rev rec

Ct(Urev V)

Т

V

V

А

V/mА

mcА

MHz

ns

pF

°C

2D522B

50

75

100

1,5

1,1/100

5

-

4

4 (0)

-60...+125

KD522А

30

40

100

1,5

1,1/100

2

-

4

4 (0)

-55...+85

KD522B

50

60

100

1,5

1,1/100

5

-

4

4 (0)

-55...+85

KD522V

-

-

100

1,5

1,1/100

-

-

4

4 (0)

-55...+85

Reference designation of diodes electric parameters:

Urev max - Maximum direct verse voltage;
Urev pul max – Maximum pulse verse voltage;
Id max – Maximum direct current;
Id pul max – Maximum pulse direct current;
Irev - Diode reverse current at maximum reverse voltage;
fd max– Diode maximum operating frequency;
Trev rec– Reverse recovery time;

Ct – Total diode capacity;
Т– environment temperature.

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