2TC613B

Transistor matrix consists of four, electrically isolated, silicon, epitaxial-planar high-frequency transistors.

Maximum collector-base voltage at given reverse collector current and open emitter circuit– 60 V

Maximum collector-emitter voltage at given collector current and base-emitter resistance – 50 V

Maximum collector-emitter voltage at given collector current and open base circuit– 60 V

Maximum allowable collector current – 0.4 A

Static value of the forward current transfer ratio – 40 min

Transition frequency – 200 MHz

Maximum power dissipation – 0.8 W

Weight – 4 g