Silicon diffusion planar p-n-p-n non-turn-off triode thyristor. Designed to be used as a switching element for high-voltage switching devices with low trigger signals.
Case type: metal-glass with hard terminals.
Thyristor type is indicated on its case.
Mass not more than 14 g, with accessories not more than 18 g.
Technical requirement version UZh3.362.030 TU
Technical parameters
| Maximum constant reverse voltage, V | 50 |
| Maximum constant voltage in off-state, V | 50 |
| Maximum repeating impulse current in on-state, A | 30 |
| Repeating impulse current in on-state, A | 2 |
| Power dissipation in on-state, W | 4 |
| Voltage in on-state,М | 2 |
| Constant current in off-state, not more than, mA | 5 |
| Constant reverse current, not more than, mA | 5 |
| Constant gate trigger current, not more than, mA | 70 |
| Constant gate trigger voltage, not more than, V | 6 |
| Time rate of rise of off-state voltage, V/mks | 5 |
| Turn-on time, not more than, mks | 10 |
| Turn-off time, not more than, mks | 100 |
| Maximum ambient air temperature, oC | +110 |
