Silicon diffusion alloy p-type non-turn-off triode thyristor, designed for usage as a switching element.
Case type: metal-glass with flexible terminals.
Device type is indicated on its case.
Mass not more than 2.25 g
Technical requirement version ShP3.369.001 TU
Technical parameters
| Maximum constant reverse voltage, V | 50 |
| Maximum constant voltage in off-state, V | 50 |
| Maximum repeating impulse current in on-state, A | 1 |
| Mean impulse current in on-state, A | 0.075 |
| Power dissipation in on-state, W | 0.15 |
| Voltage in on-state, not more than, V | 2.25 |
| Constant current in off-state, not less than, mA | 0.5 |
| Constant reverse current, not more than, mA | 0.5 |
| Constant gate trigger current, not more than, mA | 12 |
| Constant gate trigger voltage, V | 4.5 |
| Time rate of rise of off-state voltage, V/mks | 100 |
| Turn-on time, not more than, mks | 2 |
| Turn-off time, not more than, mks | 70 |
| Maximum ambient air temperature, oC | +125 |
