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2U101I

2U101I

Silicon diffusion alloy p-type non-turn-off triode thyristor, designed for usage as a switching element.

Case type: metal-glass with flexible terminals.

Device type is indicated on its case.

Mass not more than 2.25 g

Technical requirement version ShP3.369.001 TU

Technical parameters

Maximum constant reverse voltage, V

50

Maximum constant voltage in off-state, V

50

Maximum repeating impulse current in on-state, A

1

Mean impulse current in on-state, A

0.075

Power dissipation in on-state, W

0.15

Voltage in on-state, not more than, V

2.25

Constant current in off-state, not less than, mA

0.5

Constant reverse current, not more than, mA

0.5

Constant gate trigger current, not more than, mA

12

Constant gate trigger voltage, V

4.5

Time rate of rise of off-state voltage, V/mks

100

Turn-on time, not more than, mks

2

Turn-off time, not more than, mks

70

Maximum ambient air temperature, oC

+125

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