Thyristor is a (P-N-P-N) silicon semiconductor device of average capacity.
It can be made to operate as either an open-circuit switch or as a controlled rectifying diode.
The device is assembled in a hard-leadglass-metal case.
Its metal base is connected to the anode; and the cathode has an increased output length.
Thyristor type is indicated on the side of the case.
Maximum weight – 14 grams.
Electrical Parameters
| Average on-state current IT(AV) = 10 A, max | |
| Тc = 25°С | 1,5 V |
| Тc = -60°С | 2,0 V |
| Gate trigger voltage at Uас= 10 V, I GT = 0,2 A, Тc = -60°С, max | 7,0 V |
| Gate non-trigger direct voltage at Uас= UD max, Тc = Тc max, min | 0,2 V |
| Direct off-state current at Uас= U D max, RG=∞, Тc = Тc max, max | 10 mA |
| Hold current at UD=10 V, max | 0,3 A |
| Direct reverse current at UR = UR max, RG = ∞, Тc = Тc max, max | 10 mA |
| Gate trigger direct current at UD =10 V, I T (AV) =10 A, Тc = -60°С, max | 0,2 A |
| Gate non-trigger direct current at UD = Uасmax, Тc = Тc max, min | 2,5 mA |
| Turn-on time at UD = 50 V, IT (AV) =10 A, I GT = 0,2 A, Тc = Тc max, max | 10 us |
| Turn-off time at Uас, i = UD max, duoff /dt = 5 V/us, IT (AV) = 10 А, Тc = Тc max, max | 100 us |
Operational Limits
| Maximum direct reverse voltage | 400 V |
| Maximum direct off-state voltage | 400 V |
| Critical rate of rise of off-state voltage | 5,0 V/us |
| Maximum forward gate direct voltage | 10 V |
| Maximum direct on-state current at Тc =70°С | 10 A |
| Repetitive peak on-state current at I T (AV) = 5 А, τi =10 ms | 30 A |
| Surge on-state current at τi = 50 mcs | 50 A |
| Maximum forward gate direct current | 0,3 A |
| Maximum peak forward gate current at tc = 50 mcs | 0,5 A |
| Maximum reverse gate direct current | 5,0 mA |
| Maximum average power dissipation | |
| Тc=70°С | 20 W |
| Тc=110°С | 1,5 W |
| Maximum peak gate power dissipation | |
| U c, d, i = 20 В, tc =10 mcs, Тc=70°С | 20 W |
| U c, d, i = 10 В, tc =50 mcs, Тc=70°С | 2,5 W |
| Ambient temperature | From -60 to Тc = 110°С |
