2P303G
Silicon epitaxial-planar field-effect transistor with p-n gate and n-channel.Designed for use in charge-sensitive amplifiers and other nuclear spectrometry devices.
Case type: KT-1-12, metal-glass with flexible terminals
Device type is indicated on its case
Technical requirement version AEYaR,432140.203 TU
Main parameters
| Maximum power dissipation, mW | 200 | |
| Cut-off voltage (gate-to-source), V | <8 | |
| Maximum source-to-drain voltage, V | 25 | |
| Maximum gate-to-drain voltage, V | 30 | |
| Maximum gate-to-source voltage, V | 30 | |
| Drain constant current, mA | 20 | |
| Drain initial current, mA | 3..12 | |
| Gate leakage current, nA | <1 | |
| Mutual transconductance, mA/V | 3..7 | |
| Input capacitance (gate-to-source), pF | <6 | |
| Feedback capacitance (common-source circuit with input short-circuit, AC), pF | <2 | |
| Ambient air temperature, oC | -60..+125 |
