N-channel silicon JFET. It is designed for use in low-noise, high-input-impedance amplifiers and switching circuits at frequencies up to 300 MHz.
Drain-Source Voltage : 25 V
Gate-Source Voltage : 30 V
Drain Current : 20 mA
Power Dissipation : 200 mW
Electrical Parameters (Group V/В):
Pinch-off Voltage: 0.5 V to 3.0 V
Drain-Source Saturation Current: 1.5 mA to 5.0 mA
Transconductance:2.0 mA/V
Noise Figure: Very low (typically < 3 dB)
