2T312
Universal epitaxial-planar silicon n-p-n transistor for switching devices, amplifiers and generators.
Case type: KTYu-3-1, metal-glass with flexible terminals.
Device type is indicated on its case.
Mass not more than 1 g.
Technical requirement version ZhK3.365.143 TU
Technical parameters (at junction temperature +25 oC)
| 2T312A | 2T312B | 2T312V | |
| Maximum allowed collector constant current, mA | 30 | 30 | 30 |
| Maximum allowed collector impulse current, mA | 60 | 60 | 60 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter circuit resistance, V | 30 | 30 | 30 |
| Maximum collector-to-base voltage at given collector current and zero base current, V | 30 | 30 | 30 |
| Maximum allowed emitter-to-base constant voltage at zero collector current | 4 | 4 | 4 |
| Maximum allowed collector power dissipation, W | 225 | 225 | 225 |
| Static current transfer coefficient | 12..100 | 25..100 | 50..250 |
| Collector-to-emitter saturation voltage, V | 0.5 | 0.5 | 0.35 |
| Collector reverse current, mkA | 1 | 1 | 1 |
| Beta cutoff, MHz | 80 | 120 | 120 |
| Collector junction capacitance, pF | 5 | 5 | 5 |
| Emitter junction capacitance, pF | 20 | 20 | 20 |
| Maximum junction temperature, oC | +150 | +150 | +150 |
| Ambient air temperature, oC | -60..+125 | -60..+125 | -60..+125 |
