Universal epitaxial-planar p-n-p silicon transistors for high-frequency amplifiers and switching devices
Case type: KT-1-7, metal-glass with flexible terminals.
Device type is indicated on its case.
Technical requirements version SchY0.336.049 TU
Technical parameters (at 25 oC)
| Maximum allowed collector constant current, mA | 300 | |
| Maximum allowed collector impulse current, mA | 700 | |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 50 | |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 60 | |
| Maximum allowed emitter-to-base voltage at zero collector current, V | 5 | |
| Maximum collector power dissipation, mW | 300 | |
| Static current transfer coefficient | 30..120 | |
| Collector-to-emitter saturation voltage, V | 0.5 | |
| Collector reverse current, mkA | 0.5 | |
| Beta cutoff, MHz | 200 | |
| Collector junction capacitance, pF | 12 | |
| Emitter junction capacitance, pF | 35 | |
| Maximum junction temperature, oC | 150 | |
| Ambient air temperature, oC | -60..+125 |
