2T313B
Epitaxial-passivated silicon transistor.
Case type: metal-glass
Mass not more than 0.5 g
Main parameters (at ambient temperature +23±10 oC)
| Collector-to-emitter saturation voltage (at IC=150 mA, IB=15 mA), not more than, V | 0.5 |
| Base-to-emitter saturation voltage (at IC=150 mA, IB=15 mA), not more than, V | 1.3 |
| Collector reverse current (at UCB=50 V), not more than, µA | 0.5 |
| Emitter reverse current (at UEB=5 V), not more than, µA | 0.5 |
| Static current transfer coefficient (at UCB=10 V, IE=1 mA) | 80..300 |
| Absolute high frequency current transfer coefficient (at UCB=10 V, IE=1 mA), not less than | 2 |
| Feedback circuit high frequency response time (at UCE=20 V, IC=50 mA, f=100 MHz), not more than, ns | 120 |
| Collector junction capacitance (at UCB=10 V, f=10 MHz), not more than, pF | 12 |






