Universal silicon epitaxial-planar n-p-n transistor for switching devices.
Case type: metal-glass with flexible terminals, type KT-1-7
Device type is indicated on its case
Mass not more than 0.5 g
Technical requirement version SB0.336.019 TU
Technical parameters
| Maximum allowed collector constant current, mA | 50 |
| Maximum allowed collector impulse current, mA | 50 |
| Maximum collector-to-emitter voltage at given collector current and emitter-to-base circuit resistance, V | 10 |
| Maximum allowed collector-to-base current at given collector current and zero base current, V | 10 |
| Maximum allowed emitter-to-base constant voltage at zero collector current, V | 4 |
| Maximum allowed collector power dissipation, mW | 150 |
| Static current transfer coefficient | 40..120 |
| Collector-to-emitter saturation voltage, V | 0.4 |
| Collector reverse current, mkA | 0.5 |
| Beta cutoff, MHz | 800 |
| Collector junction capacitance, pF | 3 |
| Emitter junction capacitance, pF | 2.5 |
| Maximum allowed junction temperature, oC | +150 |
| Ambient air temperature, oC | -60..+125 |
