2T325B
Silicon epitaxial-planar n-p-n amplifying transistors with non-standardized noise ratio, designed for use in high-frequency amplifiers
Case type: metal-glass with flexible terminals, type KT-2-3
Device type is indicated on its case
Mass not more than 1.2 g
Technical requirement version SB0.336.023 TU
Technical parameters
| Maximum allowed constant collector current, mA | 60 |
| Maximum allowed impulse collector current, mA | 60 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter circuit resistance, V | 15 |
| Maximum collector-to-base current at given collector current and zero emitter current, V | 15 |
| Maximum emitter-to-base voltage at zero collector current, V | 4 |
| Maximum collector power dissipation, mW | 225 |
| Static current transfer coefficient | 70..210 |
| Collector reverse current, mkA | 0.5 |
| Beta cutoff, MHz | 800 |
| Collector junction capacitance, pF | 2.5 |
| Emitter junction capacitance, pF | 2.5 |
| Maximum allowed junction temperature, oC | +150 |
| Ambient air temperature, oC | -60..+125 |
