2T321A is a silicon epitaxial-planar PNP bipolar transistor.
Key specifications:
maximum permissible DC collector current — 200 mA;
pulse collector current — 2 A;
maximum continuous collector power dissipation — 210 mW;
transition frequency — more than 60 MHz; DC current gain h21E — 20–60.
Сollector-base voltage is 60 V; emitter-base voltage is 4 V.
Collector junction capacitance: maximum 40 pF.
Ambient operating temperature range: −60...+125 °C; maximum junction temperature: +150 °C.
