2T transistor series
2T504A: switching-type n-p-n silicon junction transistor
2Т606А, 2Т907А, 2Т904А: generator-type n-p-n silicon epitaxial junction transistor
2Т839А: impulse-type n-p-n silicon epitaxial junction transistor
Design:
2T504A: glass-metal case with flexible lead
2Т606А, 2Т907А, 2Т904А: metal case with hard leads and mounting screw
2Т839А: metal case with glass insulator and hard leads
Application:
2T504A: high-voltage voltage stabilizers and converters, gas-discharge panel display controller devices
2Т606А, 2Т907А, 2Т904А: power amplifiers, frequency multipliers and self-excited oscillators at frequencies 100…400 MHz and voltage 28 V
2Т839А: high-voltage switching devices and secondary power supplies
Electrical parameters:
| Transistor type | Structure | Parameters limits at Tj=25 °C | Parameters values at Tj=25 °C | Тj max | Тmax | ||||||||||||
| Icmax | Icimax | UceR max | Ucb0 max | Ucb0 max | Pcmax | hct | Uce sat | Icbr | Iebr | fbc | Cn | Cc | Ce | ||||
| A | A | V | V | V | W | V | µA | µA | MHz | dB | pF | pF | °C | °C | |||
| 2Т504А | n-p-n | 1 | 2 | 350 | 400 | 6 | 1 (10) | >15 | 1 | 100 | 100 | 20 | - | 30 | 300 | 125 | -60…+125 |
| 2Т606А | n-p-n | 0,4 | 0,8 | 65 | - | 4 | 28 | 2,5 | - | <1 | <1 | <0,1 | >350 | 0,8 | >2,5 | 150 | -60…+125 |
| 2Т907А | n-p-n | 1 | 3 | 65 (75) | - | 4 | 28 | 16 | 10…80 | <0,35 | <2 | <0,25 | 0,35 | >8 | >2 | 150 | -60…+125 |
| 2Т904А | n-p-n | 0,8 | 1,5 | 65 | - | 4 | 28 | 7 | >10 | <0,3 | <1 | <0,1 | >0,35 | >3 | >2,5 | 150 | -60…+125 |
| 2Т839А | n-p-n | 10 | 10 | 1500 | 1500 | 5 | 50 | >5 | <1,5 | <1 | <10 | - | 5 | 240 | 4000 | 125 | -60…+125 |
