Switching n-p-n epitaxial-planar silicon transistor for use in fast-acting impulse and high frequency devices.
Case type: KTYu-3-6, metal-glass with flexible terminals.
Mass not more than 1.75 g.
Climate version: boreal
Technical parameters
| Maximum allowed collector constant current, mA | 400 |
| Maximum allowed collector impulse current, mA | 800 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 60 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 60 |
| Maximum emitter-to-base voltage at zero collector current, V | 4 |
| Maximum allowed collector power dissipation, W | 0.5 |
| Static current transfer coefficient | 25..80 |
| Collector-to-emitter saturation voltage, V | <1 |
| Collector reverse current, mkA | <10 |
| Emitter reverse current, mkA | <10 |
| Beta cutoff, MHz | >200 |
| Collector junction capacitance, pF | <15 |
| Emitter junction capacitance, pF | <50 |
| Maximum allowed junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
