2T630B

Transistors 2Т630B are silicon planar with n-p-n structure, universal.
Transistors 2T630B designed for application in amplifiers and pulse devices, in control schemes of gas panel display of alternate current, power stage switching stabilizers and transformers.
Transistors 2Т630А, 2Т630B are produced in metal-glass casing with flexible lead-outs.
Device type – marked on casing.
Device type marked in label.
Transistor weight in metal-glass casing maximum 2 g, crystal maximum 0,005 g.
Casing type: KT-2.

Basic technical characteristics of transistor 2Т630B:
• Transistor structure: p-n-p
• Рk max – Constant dissipated wattage of collector: 0.8 W;
• fgr - limit frequency of current transmitting coefficient of transistor with common emitter: minimum 50 MHz;
• Ukbоmax – Maximum voltage collector-base at given reverse current of collector and open circuit of emitter: 120 V;
• Uebоmax – Maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 7 V;
• Ik max – Maximum direct current of collector: 1000 mА;
• Ikbо– Collector reverse current, maximum 1 mcА(90V);
• h21e - static coefficient of current transmitting of transistor in small signals mode for schemes with common emitter: 80... 240;
• Сk – Capacitance of collector junction: maximum 15 pF
• Rke sat – saturation resistance between collector and emitter: 2 Оm

Technical characteristics of transistors 2Т630А, 2Т630B, 2Т630А-5, 2Т630B-5: