Switching n-p-n planar silicon transistor for use in switching devices and convertors
Case type: KT-2-7(TO-39), metal-glass with flexible terminals.
Mass not more than 2.0 g.
Lifetime: 25000 h in all modes, 50000 in light mode
Technical parameters
| Maximum allowed collector constant current, A | 1 |
| Maximum allowed collector impulse current, A | 2 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 130 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 130 |
| Maximum emitter-to-base voltage at zero collector current, V | 7 |
| Maximum allowed collector power dissipation, W | 0.8 |
| Maximum allowed collector power dissipation (with a heatsink), W | 5 |
| Static current transfer coefficient | 40..150 |
| Collector-to-emitter saturation voltage, V | <0.5 |
| Collector-to-emitter reverse current, mkA | <10 |
| Beta cutoff, MHz | >50 |
| Collector junction capacitance, pF | <20 |
| Emitter junction capacitance, pF | <40 |
| Maximum allowed junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
