2T803A
Universal silicon mesaplanar n-p-n transistor for DC amplifiers, line-scan generators and secondary power supply sources.
Case type: metal-glass with hard terminals KTYu-3-20.
Mass: not more than 22 g, not more than 34 g with removable flange.
Technical parameters
| Structure | n-p-n |
| Maximum allowed collector constant current, A | 10 |
| Maximum constant collector-to-emitter voltage at given collector current an base-to-emitter circuit resistance, V | 60 |
| Maximum constant emitter-to-base voltage at zero collector current, V | 4 |
| Maximum collector power dissipation, W | 60 |
| Static current transfer coefficient | 10..50 |
| Collector-to-emitter saturation voltage. V | 2.5 |
| Collector reverse current, mA | 300 |
| Emitter reverse current, mA | 20 |
| Beta cutoff, MHz | >20 |
| Collector junction capacitance, pF | 250 |
| Collector-to-emitter saturation resistance, not more than, Ohm | 0.5 |
| Maximum junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
