2T819A

Silicon mesaepitaxial-planar n-p-n transistors are designed for amplifiers and switching devices.
2Т819Аtransistor is manufactured in hard-leaded metal case with glass insulators.
Maximum weight20 g
Casing type: KT-9.
Technical specification: aA0.336.142 TU.
Basic technical characteristics:
• Transistor structure: n-p-n;
• Рc max – constant dissipated power of a collector: 3 W;
• Рc h max –constant dissipated power of a collector with a heatsink: 100 W;
• fl - limit frequency of the transistor current transmission coefficient for a common-emitter circuit: min 3 MHz;
• Ucbo max –Maximum collector-emitter voltage at given collector current and given base-emitter resistance: 100 V (0,1 kΩ);
• Uebo max - Maximum collector-emitter voltage at given emitter reverse current and collector open circuit: 5 V;
• Ic max –Maximum allowable constant current on the collector: 15 A;
• Iкi max - Maximum allowable impulse current on the collector: 20 A;
• Icbo–Collector reverse current -current through a collector junction with a given collector-base return voltage and an open emitter terminal: max 1 mA (40V);
• h21e–Static current transfer ratio for common-emitter circuits: min 20;
• Rce sat–Collector-emitter saturation resistance: max 0,4 Ω