Switching n-p-n epitaxial-planar silicon transistor for use in amplifiers, convertors and secondary power supply units.
Case type: KT-2-7 (TO-39), metal-glass with flexible terminals.
Mass not more than 1.5 g.
Climate version: boreal
Lifetime: 25000 h in all modes, 40000 h in light mode.
Technical parameters
| Maximum allowed collector constant current, A | 2 |
| Maximum allowed collector impulse current, A | 4 |
| Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V | 50 |
| Maximum collector-to-emitter voltage at given collector current and zero base current, V | 45 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 60 |
| Maximum emitter-to-base voltage at zero collector current, V | 5 |
| Maximum allowed collector power dissipation, W | 1 |
| Maximum allowed collector power dissipation (with a heatsink), W | 5 |
| Static current transfer coefficient | >25 |
| Collector-to-emitter saturation voltage, V | <0.6 |
| Collector reverse current, mA | <0.1 |
| Emitter reverse current, mA | <1 |
| Beta cutoff, MHz | >4 |
| Collector junction capacitance, pF | 150 |
| Emitter junction capacitance, pF | 350 |
| Maximum allowed junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
