2T830G

Transistors

Transistors 2Т830G are silicon mesa-epitaxial-planar of p-n-p structure.
Transistors are designed for application in power amplifiers, secondary power source, transformers.

Casing of transistors 2Т830А, 2Т830B, 2Т830V, 2Т830G is metal with glass insulators and flexible lead-outs.
Transistor weight, maximum 2 g.
Casing type: KТ-2 (ТО-39).
Technical conditions: аА0.339.139 ТU.

Basic technical characteristics of transistor 2Т830G:
• transistor structure: p-n-p;
• Рk t max – constant dissipated wattage of collector with heatsink: 5 W;
• fgr - limit frequency of coefficient of current transmitting of transistor for scheme with common emitter: minimum 4 МHz;
• Ukbоmax – maximum voltage collector – base at given reverse current of collector and open circuit of emitter: 100 V;
• Uebоmax – maximum voltage emitter – base at given reverse current of emitter and open circuit of collector: 5 V;
• Ik max – maximum direct current of collector: 2 А;
• Ik i max – maximum pulse current of collector: 4 А;
• Ikbо– reverse current of collector: maximum 100 mcА(100V);
• h21e – static coefficient of current transmitting of transistor for schemes with common emitter: maximum 20;
• Rkesat – saturation resistance between collector and emitter: maximum 1,2 Оm

Technical characteristics of transistors 2Т830А, 2Т830B, 2Т830V, 2Т830G: