Transistors
Transistors 2T831G are amplifying silicon mesa-epitaxial planar with n-p-n structure.
Transistors 2T831G are designed for application in power amplifiers, inverters.
Casing of transistors 2Т831А, 2Т831B, 2Т831V, 2Т831G – metal with glass insulators and flexible lead-outs.
Transistors weight, maximum 2 g.
Casing type: KТ-2 (ТО-39).
Technical conditions: аА0.339.140 ТU.
Basic technical characteristics of transistor 2Т831G:
• Transistor structure: n-p-n;
• Рk тmax – Constant dissipated wattage of collector with heatsink: 5 W;
• fl – cut-off frequency of current transmitting coefficient of transistor for common emitter connection: minimum 4 МHz;
• Ukbo max – Maximum voltage collector-base at given reverse current of collector and emitter open circuit: 100 V;
• Uebo max – Maximum voltage emitter-base at given reverse current in collector circuit: 5 V;
• Ik max – Maximum direct current of collector: 2 А;
• h21e - static coefficient of current transmitting of transistor for common emitter connections: above 20;
• Rke sat – saturation resistance between collector and emitter: maximum 0,6 Оm
Technical characteristics of transistors 2Т831А, 2Т831B, 2Т831V, 2Т831G:
| Transistor type | Structure | Maximum parameters values at Тp=25°С | Parameters values at Тp=25°С | Tp | Т | ||||||||||||
| IК | Ik. I. | UkeR max | Ukb0 max | Ueb0 max | Рkmax | h21E | Uke | IkbО | IebО | IkeR | f l. | Сk | Сe | ||||
| А | А | V | V | V | W | V | mcА | mcА | mА | МHz | pF | pF | °С | °С | |||
| 2Т831А | n-p-n | 2 | 4 | 30 | 35 | 5 | 1 (5) | >25 | <0,6 | <100 | <1000 | - | >4 | <150 | <350 | 150 | -60…+125 |
| 2Т831B | n-p-n | 2 | 4 | 50 | 60 | 5 | 1 (5) | >25 | <0,6 | <100 | <1000 | - | >4 | <150 | <350 | 150 | -60…+125 |
| 2Т831V | n-p-n | 2 | 4 | 70 | 80 | 5 | 1 (5) | >25 | <0,6 | <100 | <1000 | - | >4 | <150 | <350 | 150 | -60…+125 |
| 2Т831G | n-p-n | 2 | 4 | 90 | 100 | 5 | 1 (5) | >20 | <0,6 | <100 | <1000 | - | >4 | <150 | <350 | 150 | -60…+125 |
