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2T834A

Amplifying silicon mesaplanar n-p-n compound transistor for application in current and voltage controllers, switching devices.

Metal case with glass insulators and hard terminals.

Mass not more than 22 g

Case type KT-9 (TO-3)

Main parameters

Maximum allowed collector constant current, A

15

Maximum allowed collector impulse current, A

20

Maximum emitter-to collector voltage at given collector current, V

500

Maximum emitter-to-base constant voltage at zero collector current, V

8

Maximum allowed collector power dissipation, W

100

Static current transfer coefficient

>150

Collector-to-emitter saturation voltage, V

<2

Collector reverse current, mA

<50

Collector-to-emitter reverse current at given collector-to-emitter reverse voltage, mA

<3

Beta cutoff, MHz

>4

Collector junction capacitance, pF

<100

Maximum junction temperature, oC

150

Ambient air temperature, oC

-60..+125

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