Amplifying silicon mesaplanar n-p-n compound transistor for application in current and voltage controllers, switching devices.
Metal case with glass insulators and hard terminals.
Mass not more than 22 g
Case type KT-9 (TO-3)
Main parameters
| Maximum allowed collector constant current, A | 15 |
| Maximum allowed collector impulse current, A | 20 |
| Maximum emitter-to collector voltage at given collector current, V | 500 |
| Maximum emitter-to-base constant voltage at zero collector current, V | 8 |
| Maximum allowed collector power dissipation, W | 100 |
| Static current transfer coefficient | >150 |
| Collector-to-emitter saturation voltage, V | <2 |
| Collector reverse current, mA | <50 |
| Collector-to-emitter reverse current at given collector-to-emitter reverse voltage, mA | <3 |
| Beta cutoff, MHz | >4 |
| Collector junction capacitance, pF | <100 |
| Maximum junction temperature, oC | 150 |
| Ambient air temperature, oC | -60..+125 |
