2T866A

Silicone epitaxial planar NPN switching transistor.
Designed for switching devices and power supply of auxiliary circuits.
Assembled in a ceramet flexible stripline package.

Transistor type is indicated on the package.
Max weight 7 g
Package type: КТ-57.

Maintechnicalcharacteristicsof2Т866Аtransistor:
• Structure: n-p-n;
• Р_cmax – Totalheatsinkcollectordissipation: 30W;
• f_c – Cutoff frequency of a common-emitter amplifier: min 25MHz;

• U_cermax – Maximum collector-emitter voltage for given collector current and given resistance in the base-emitter circuit: 200V;

• U_ebomax – Maximum emitter-base voltage for given emitter reverse current and open collector circuit: 4V;
• I_cmax – Maximum direct current rating of a collector: 20A;

• I_cpmax – Maximum pulse current of a collector: 20А;
• I_cer–Collector cutoff current - current through the collector junction at a given collector-base return voltage and an open emitter terminal: max 25mA (100V);
• h21_e – Staticvalueoftheforwardcurrenttransferratioforcommon-emitteramplifier: 15;
• С_c –Collector capacitance: max 400 pF;

• R_{ce sat} – Collector-to-emitter saturation resistance: 0,15Ω.

• t_to - Circuit-commutated turn-off time: max 450 ns