Silicone epitaxial planar NPN switching transistor.
Designed for power supply of auxiliary circuits and switching circuits.
Assembled in a ceramet flexible stripline package.
Transistor type is indicated on the package.
Max weight 7 g
Package type: КТ-57.
Main technical characteristics of 2Т874Аtransistor:
• Structure: n-p-n;
• Рcmax – Totalheatsinkcollectordissipation: 75W;
• fc – Cutoff frequency of a common-emitter amplifier: min 20MHz;
• Ucermax – Maximum collector-emitter voltage for given collector current and given resistance in the base-emitter circuit: 150 V;
• Uebomax – Maximum emitter-base voltage for given emitter reverse current and open collector circuit: 5V;
• Icmax – Maximum direct current rating of a collector: 30A;
• Icpmax – Maximum pulse current of a collector: 50А;
• Icer–Collector cutoff current - current through the collector junction at a given collector-base return voltage and an open emitter terminal: max 3 mA (150V);
• h21e – Static value of the forward current transfer ratio for common-emitter amplifier: 15…50;
• Сc–Collector capacitance: max 200 pF;
• Rce sat– Collector-to-emitter saturation resistance: 0,04Ω.
