2T874A

Silicone epitaxial planar NPN switching transistor.
Designed for power supply of auxiliary circuits and switching circuits.
Assembled in a ceramet flexible stripline package.

Transistor type is indicated on the package.
Max weight 7 g
Package type: КТ-57.

Main technical characteristics of 2Т874Аtransistor:
• Structure: n-p-n;
• Р_cmax – Totalheatsinkcollectordissipation: 75W;
• f_c – Cutoff frequency of a common-emitter amplifier: min 20MHz;

• U_cermax – Maximum collector-emitter voltage for given collector current and given resistance in the base-emitter circuit: 150 V;

• U_ebomax – Maximum emitter-base voltage for given emitter reverse current and open collector circuit: 5V;
• I_cmax – Maximum direct current rating of a collector: 30A;

• I_cpmax – Maximum pulse current of a collector: 50А;
• I_cer–Collector cutoff current - current through the collector junction at a given collector-base return voltage and an open emitter terminal: max 3 mA (150V);
• h21_e – Static value of the forward current transfer ratio for common-emitter amplifier: 15…50;
• С_c–Collector capacitance: max 200 pF;

• R_{ce sat}– Collector-to-emitter saturation resistance: 0,04Ω.