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2T930A

Transistors

Transistors 2Т930А are silicon epitaxial-planar generator with n-p-n structure.
Transistors are designed for application in power amplifiers, frequency multipliers and self-oscillators with frequency 100...400 Mhz and supply voltage 28 V.
Transistors are produced in metal-ceramic casing with strip lead-outs.

LC-section – casing inside.

Transistor weight, maximum 7g.

Casing type: KT-32.
TUchnical conditions: аА0.339.036 ТУ.

Basic technical characteristics of transistor 2Т930А:
• transistor structure: n-p-n;
• Рc h max – constant dissipated power of collector with heatsink: 75 W;
• fl – limit frequency of current transmitting of transistor for circuit with common emitter: over 450 МHz;
• Ucer dis – discharge voltage collector-emitter at given current of collector and given resistance in base-emitter circuit: 50 V (0,1kOm);
• Uebоmax – maximum voltage emitter-base at given reverse current of emitter and open circuit of collector: 4 V;
• Ic max – maximum pulse current of collector: 6 А;
• Icer – reverse current collector-emitter and resistance in base-emitter circuit: maximum 20 mА(50V);
• h21e – static coefficient of current transmitting of transistor for circuits with common emitter: over 40;
• Сc – collector junction capacitance: maximum 80 pF;
• Ca.р. – coefficient of power amplifying: minimum 6 dB;
• Рout – output power of transistor: minimum 40 W with frequency 400 МHz;
• tк– timing constant of reverse connection circuit at high frequency: maximum 8 ps

Technical characteristics of transistors 2Т930А, 2Т930B:

Transistor type

Structure

Maximum values of parameters at Tp=25°С

Parameters values at Tp=25°С

Tp
max

Т
max

Ic
max

Ic. i.
max

UceR max
(Uce0 max)

Ucb0 max

Ueb0 max

Usupmax

Рc. max
(Рc. Т.max)

h21E

Uce sat.

IceR

IebО

f l.

Pout

Cap

А

А

V

V

V

V

W

V

GHz

W

dB

°С

°С

2Т930А

n-p-n

6

-

50

-

4

28

75

>40

-

<20

<10

>0,45

>40

>6

160

-60…+125

2Т930B

n-p-n

10

-

50

-

4

28

120

>50

-

<100

<20

>0,6

>75

>4

160

-60…+125

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