2T945A
Switching n-p-n mesaepitaxial planar silicon transistors for switching and impulse devices.
2T945A transistor is produced in a metal-ceramic case with hard terminals.
2T945A-5 is a set of undivided dies with contact plates for hybrid integrated microcircuits.
Device type is indicated on the label.
Mass:
in metal-ceramic case not more than 20g
die not more than 0.01 g
Case type KT-9 (TO-3)
Electrical parameters (at +25 oC)
| Maximum allowed constant collector current, A | 15 |
| Maximum allowed impulse collector current, A | 25 |
| Collector-to-emitter maximum voltage (at given collector current and base-to-emitter circuit resistance, V | 200 |
| Emitter-to-base maximum voltage (at zero collector current), V | 5 |
| Maximum collector power dissipation, W | 50 |
| Static forward current transfer ratio | 10..60 |
| Collector-to-emitter saturation voltage, V | <2.5 |
| Emitter reverse current, mA | <300 |
| Collector-to-emitter reverse current, mA | <25 |
| Beta cutoff, MHz | <51 |
| Collector junction capacitance, pF | <200 |
| Maximum junction temperature, oC | 175 |
| Ambient air temperature, oC | -60..+125 |
