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2T945A

2T945A

Switching n-p-n mesaepitaxial planar silicon transistors for switching and impulse devices.

2T945A transistor is produced in a metal-ceramic case with hard terminals.

2T945A-5 is a set of undivided dies with contact plates for hybrid integrated microcircuits.

Device type is indicated on the label.

Mass:

in metal-ceramic case not more than 20g

die not more than 0.01 g

Case type KT-9 (TO-3)

Electrical parameters (at +25 oC)

Maximum allowed constant collector current, A

15

Maximum allowed impulse collector current, A

25

Collector-to-emitter maximum voltage (at given collector current and base-to-emitter circuit resistance, V

200

Emitter-to-base maximum voltage (at zero collector current), V

5

Maximum collector power dissipation, W

50

Static forward current transfer ratio

10..60

Collector-to-emitter saturation voltage, V

<2.5

Emitter reverse current, mA

<300

Collector-to-emitter reverse current, mA

<25

Beta cutoff, MHz

<51

Collector junction capacitance, pF

<200

Maximum junction temperature, oC

175

Ambient air temperature, oC

-60..+125

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