2T935A

Static forward current transfer ratio

at T_c=+25 ^oC, U_ce=4 V, I_c=15 A

at T_c=+125 ^oC, U_ce=54 V, I_c=3 A

at T_c=-60^oC, U_ce=4 V, I_c=15 A

20..30..100

150

10..100

Beta cutoff at U_ce=10 V, I_c=1 A, not less than

51 MHz

Critical voltage at I_c=1 A, not less than

70 V

Collector-to-emitter saturation voltage at I_c= 15 A, I_b=3 A

bogey value

1 V

0.75* V

Base-to-emitter saturation voltage at I_c= 15 A, I_b=3 A

bogey value

1.7 V

1.3 V

Turn-on time at I_c= 10 A, I_b=2 A, not more than

0.25 µs

Turn-off time at I_c= 10 A, I_b=2 A, not more than

0.7µs

Collector junction capacitance at U_cb=10 V, not more than

800 pF

Emitter junction capacitance at U_eb=4 V, not more than

3500 pF

Collector-to-emitter cutoff current at R_be=10 ?, not more than

at T_d=min..+25 ^oC, U_ce=80 V

at T_d=max, U_ce=60 V

30 mA

60 mA

Emitter cutoff current at U_eb=4 V, not more than

300 mA

Collector-to-emitter constant voltage at R_be=10 ? and T_j=+100 ^oC

80 V

Collector-to-emitter impulse voltage at R_be=10 ?, impulse time 50 µs, wavefront time 15 µs, pulse ratio 20

100 V

Emitter-to-base constant voltage

5 V

Emitter-to-base impulse voltage at impulse time 50µs, pulse ration 20

6 V

Collector constant current

20 A

Collector impulse current at impulse time 1 µs, pulse ratio 2

30 A

Base constant current

10 A

Base impulse current at impulse time 1 µs, pulse ratio 2

15 A

Collector power dissipation at T_c=min..+50 ^oC

60 W

P-n junction temperature

+150 ^oC

Ambient air temperature

-60..+125 ^oC