2TS613B NPN Transistor
Transistor matrix consists of four, electrically isolated, silicon, epitaxial-planar high-frequency transistors.
Maximum collector-base voltage at given reverse collector current and open emitter circuit– 60 V
Maximum collector-emitter voltage at given collector current and base-emitter resistance – 50 V
Maximum collector-emitter voltage at given collector current and open base circuit– 60 V
Maximum allowable collector current – 0.4 A
Static value of the forward current transfer ratio – 40 min
Transition frequency – 200 MHz
Maximum power dissipation – 0.8 W
Weight – 4 g
