KT812A

Silicone Mesaplanar Impulse Transistor with n-p-n structure.
Designed for impulse and switching devices.
Metal package with glass insulators and rigid terminals.
Weight 20 g
Package type: КТ-9.

Main technical characteristics:
• Structure: n-p-n;
• Р_cmax – Total heatsink collector dissipation: 50mW;
• f_c – Cutoff frequency of a common-emitter amplifier: min 3MHz;
• U_cermax – Maximum collector-emitter voltage for given collector current and given resistance in the base-emitte rcircuit: 400 V (0,1 kΩ);
• U_ebomax – Maximum emitter-base voltage fo rgiven emitter reverse current and open collector circuit: 7V;
• I_cmax – Maximum direct current rating of a collector: 8A;

• I_cp max –Maximum pulse current of a collector: 12 A;
• I_cer –Collector-emitter cutoff current for given collector-emitter reverse voltage and base-emitter circuit resistance: max 5mA (700V);
• h_21e – Static value of the forward current transfer ratio for common-emitter amplifier: min 4;
• С_iob– Collector-base capacitance: max0,3pF;