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2TS622A

2TS622A

Transistor matrix, containing 4 electrically insulated switching UHF epitaxial-planar n-p-n silicon transistors. Designed for fast impulse and switching devices.

Case type: 401.14-6, metal-ceramic with flexible terminals.

Matrix type is indicated on its case.

Mass not more than 0.4 g.

Technical requirement version I93.456.001 TU

Technical parameters (at 25 oC)

Maximum allowed collector constant current, mA

0.4

Maximum allowed collector impulse current, mA

0.6

Maximum collector-to-emitter voltage at given collector current and base-to-emitter resistance, V

45

Maximum collector-to-base voltage at given collector current and zero emitter current, V

45

Maximum allowed emitter-to-base voltage at zero collector current, V

4

Maximum collector power dissipation, W

10

Static current transfer coefficient

25..150

Collector-to-emitter saturation voltage, V

<1.3

Collector reverse current, mkA

<10

Emitter reverse current, mkA

<20

Beta cutoff, MHz

>200

Collector junction capacitance, pF

<15

Emitter junction capacitance, pF

<60

Maximum junction temperature, oC

150

Ambient air temperature, oC

-60..+125

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