KT972A

Silicone Epitaxial Planar NPN Amplifying Transistor.
Designed for automation system output stages.
Plastic package with rigid terminals.
Max weight 1 g
Package type:КТ-27-2 (ТО-126).
Main technical characteristics:
• Structure: n-p-n;
• Р_cmax – Total heatsink collector dissipation: 8mW;
• f_c – Cutoff frequency of a common-emitter amplifier: min 200MHz;
• U_cermax – Maximum collector-emitter voltage for given collector current and given resistance in the base-emitter circuit: 60 V (1 kΩ);
• U_ebomax – Maximum emitter-base voltage for given emitter reverse current and open collector circuit: 5V;
• I_cmax – Maximum direct current rating of a collector: 4A;
• I_cer –Collector-emitter cutoff current for given collector-emitter reverse voltage and base-emitter circuit resistance: max 1mA (60V);
• h_21e – Static value of the forward current transfer ratio for common-emitter amplifier: min 750;
• С_iob– Collector-base capacitance: max0,3pF;

• t_dis – Discharge time max 200 ns