MP106
Low-frequency silicon alloy p-n-p amplifying transistor with non-standardized noise ratio. Transistor is suitable for low-frequency signal amplification.
Case type: metal-glass with flexible terminals, KTYu-3-6. Device type is indicated on the side of the case.
Mass not more than 2 g.
Technical parameters
| Maximum allowed constant collector current, mA | 10 |
| Maximum allowed impulse collector current, mA | 50 |
| Maximum collector-to-emitter voltage at given collector current and emitter-to-base circuit resistance, V | 15 |
| Maximum collector-to-base voltage at given collector current and zero emitter current, V | 15 |
| Maximum emitter-to-base current at zero collector current, V | 10 |
| Maximum allowed collector power dissipation, mW | 150 |
| Static current transfer coefficient | 15..100 |
| Beta cutoff, MHz | >0.5 |
| Maximum allowed junction temperature, oC | +150 |
| Ambient air temperature, oC | -60..+120 |
