MP13B is a universal low-frequency low-power transistor designed for amplification of small low frequency signals, for amplification, switching and pulse formation, and application in ferrittransistor cells.
MP13B is manufactured in a metal flexible-lead package.
Type designation is stated on the package.
Maximum weight - 2 g
Package type: KTYU-3-6.
Technical specifications: SB0.336.007 TU1.
Basic Electrical Parameters:
• Transistor structure: n-p-n;
• Рc max – constant dissipated power of a collector: 150 mW;
• Рc h max – constant dissipated power of a collector with a heatsink: 100 W;
• fh21b - limit frequency of the transistor current transmission coefficient for a common emitter-base circuit: min 1 MHz;
• Ucbo br – Collector-base breakdown voltage at given collector reverse current and open emitter circuit: 15 V;
• Uebo br - Emitter-base breakdown voltage at given emitter reverse current and open collector circuit: 15 V;
• Ic max – Maximum allowable constant current on the collector: 20 A;
• Icbo – Collector reverse current -current through a collector junction with a given collector-base return voltage and an open emitter terminal: max 200 µA;
• h21e – Static current transfer ratioin the low-signal mode for common emitter-base circuits: 45…100;
• Cc – Collector junction capacitance: max 60 pF
• Nf – Transistor noise factor: max 10 dB at a frequency of 1 kHz
