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MP16B

MP16

Transistor parameters

MP16

MP16A

MP16B

MP16Ya1

MP16Ya11

Structure

n-p-n

Maximum collector power dissipation, mW

200

200

200

150

150

Beta cutoff, MHz

≥1

≥1

≥2

-

-

Collector-to-base breakdown voltage at given collector reverse current and open emitter circuit, V (at 0.2k)

15

15

15

15 (100)

15 (100)

Emitter-to-base breakdown voltage at given emitter current and open collector circuit, V

15

15

15

15

15

Maximum allowed constant collector current, mA

50 (300)

50 (300)

50 (300)

300

300

Collector reverse current, mkA (at 15 V)

≤25

≤25

≤25

≤50

≤50

Static current transfer coefficient

20..35(at 1 V, 10 mA)

30..50(at 1 V, 10 mA)

45..100 (at 1 V, 1 mA)

20..70(at 10 V, 100 mA)

10..70(at 1 V, 100 mA)

Collector-to-emitter saturation resistance, Ohm

≤15

≤15

≤15

≤6.6

≤6.6

High-frequency time constant, ps

≤2000

≤1500

≤1000

-

-

You can order MP16B from us

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