Transistors P210А are germanium alloy.
Transistors are designed for use in switching devices, low frequency amplifier output stage, direct voltage converters.
Transistors are produced in metal-glass casing with stiff lead-outs.
Transistor weight, maximum 37g with lead-outs points and 48.5g with mounting flange.
Technical conditions SHM3.365.037 ТU.
Technical characteristics of transistors P210, P210А, P210B, P210V, P210SH:
| Transistor type | Structure | Parameters limits at Тp=25°С | Parameter values at Тp=25°С | Tp | Т | ||||||||||||
| IК | IК. i. | UКeR max | Ukb0 max | Ueb0 max | Rkmax | h21E | Uke | IkbО | IebО | f gr. | KSH | SK | SE | ||||
| А | А | V | V | V | W | V | mcА | mcА | MHz | dB | pF | pF | °С | °С | |||
| P210 | p-n-p | 12 | - | (60) | 65 | 25 | (60) | >15 | - | 12 | - | 0,1 | - | - | - | 85 | -60…+70 |
| P210А | p-n-p | 12 | - | (65) | 65 | 25 | (60) | >15 | - | 8 | - | 0,1 | - | - | - | 85 | -60…+70 |
| P210B | p-n-p | 12 | - | - | 65 | 25 | (45) | >10 | - | 15 | - | 0,1 | - | - | - | 85 | -60…+70 |
| P210V | p-n-p | 12 | - | - | 45 | 25 | (45) | >10 | - | 15 | - | 0,1 | - | - | - | 85 | -60…+70 |
| P210SH | p-n-p | 12 | - | (64) | - | 25 | (60) | >15 | - | 8 | - | 0,1 | - | - | - | 85 | -60…+70 |
Reference designation of electric parameters of transistors:
•Ikmax- maximum allowable direct current of transistor collector.
•Ik. И.max- maximum allowable pulse current of transistor collector.
•UkeR max– maximum voltage between collector and emitter at target current of collector and resistance in resistance in base-emitter circuit.
•Uke0 max– maximum voltage between collector and transistor emitter at target collector current and base current, equal zero.
•Ukb0 max– maximum voltage collector-base at target collector current and emitter current, equal zero.
•Ueb0 max– maximum allowable direct voltage emitter-base at collector current, equal zero.
•Рkmax- maximum allowable constant power, dissipated on transistor collector.
•Рk. Т.max– maximum allowable constant power, dissipated on transistor collector with heatsink.
•h21E– static coefficient of current transfer of bipolar transistor.
•Uke – saturation voltage between collector and emitter of transistor.
•Ikbo- collector reverse current.
•Iebo- emitter reverse current.
•f gr– cut-off frequency of coefficient of current transfer.
•KSH– transistornoisecoefficient.
•SK– collector transition capacitance.
•SE– collector transition capacitance.
•Тpmax– maximum allowable transition temperature.
•Тmax– environment maximum allowable temperature.
