P4VE
High-power low-frequency germanium fused-junction transistor.
Case type: metal with glass insulators and hard terminals
P4VE transistors are suitable for switching circuits, voltage convertors and low-frequency amplifier output stages.
Main parameters
| Maximum collector-to-emitter voltage, V | 35 |
| Maximum collector-to-base voltage, V | 50 |
| Collector maximum current, A | 5 |
| Collector power dissipation (at +40 oC), W | 25 |
| Maximum base current (impulse), A | 1.2 |
| Collector reverse current (at collector voltage 10V), µA | <400 |
| Static current transfer coefficient | >10 |
| Collector-to-emitter saturation voltage, V | <0.5 |
| Beta cutoff (common basecircuit), kHz | >150 |
| Ambient air temperature, oC | -60..+70 |
| Mass, g | 14 |
