6ZH49PD

Filament current, mA

300+25/-45

Anode current, mA

15±4

Anode current at 1^st grid current -2 V, µA

≤10

2^nd grid current, mA

2.45+0.55

1^st grid reverse current (at 1^st grid voltage -2 V), µA

≤0.2

Cathode-to-filament leakage current, µA

≤15

Transconductance, mA/V

17.5±3.5

Transconductance at filament voltage 5.7 V, mA/V

≥12

Internal resistance, k?

100

1^st grid electron current cut-off voltage, V

1.1

Bandwidth coefficient, mA/(V?pF)

1.5

Equivalent noise resistance, k?

0.35

Input resistance (at f=60 MHz), k?

5

Vibronoise voltage (at anode resistance 0.7 k?), mV

≤70

Interelectrode capacitance, pF

input

output

input-to-output

cathode-to-filament

7.8±1.2

2.7±0.4

≤0.03

4.5+2

Lifetime, h

≥10000

Filament voltage, V

6..6.6

Anode voltage, V

150

Anode voltage in off-state, V

300

2^nd grid voltage, V

150

2^nd grid voltage in off-state, V

300

1^st grid negative voltage, V

100

Cathode-to-filament voltage (at negative filament potential), V

100

Cathode current, mA

22.5

Anode power dissipation, W

2.85

2^nd grid power dissipation, W

0.52

1^st grid circuit resistance, M?

0.5

Envelope temperature, ^oC

160

Sinusoidal vibration

frequency, Hz

acceleration, g

20-600

6

Multiple impacts acceleration, g

75

Single impact acceleration, g

500

Linear acceleration, g

100

Ambient air temperature, ^oC

-60..+85